Integrated power switch structure having a vertical thyristor controlled by a lateral MOS transistor

US5413313A · kind A · utility

Assignee

• Max-Planck-Gesellschaft zur Föderung der Wissenschaften e.V. · US

Inventors

• Bernward Mutterlein · Duisburg, DE
• Holger Vogt · Mülheim, DE

Key dates

• Filing date: Jul 8, 1993
• Grant date: May 9, 1995
• Expiry date: Jul 8, 2013

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/115

Abstract

An integrated power switch structure comprises a lateral MOS transistor (3) and a lateral or vertical thyristor (2). The drain-source path of the lateral MOS transistor (3) is in series with the cathode-anode path of the thyristor (2). In order to ensure that the power switch structure reliably switches on and off with great dielectric strength and low switch-on resistance, at least the source electrode of the lateral MOS transistor (3) is insulated against the substrate (7) by means of a buried oxide layer (8) in accordance with the present invention.