Thin film transistor which prevents generation of hot carriers
US5414277A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | May 2, 1994 |
| Grant date | May 9, 1995 |
| Priority date | — |
| Expiry date | May 2, 2014 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/903
Abstract
A semiconductor transistor device comprises a gate electrode disposed over an insulating surface, a spacer element located at the end of the gate electrode, a gate insulating film covering the gate electrode, a first diffusion region spaced apart from one end of the gate electrode, separated therefrom by the gate insulating film and by the spacer element which reduces the electric field between the gate and first diffusion region, the first diffusion region extending vertically above the gate insulating film, and a second diffusion region disposed above the gate insulating film having one end spaced from the first diffusion vertically extending region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.