Semiconductor light emitting element with reflecting layers
US5414281A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 25, 1993 |
| Grant date | May 9, 1995 |
| Priority date | — |
| Expiry date | Aug 25, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/835
Abstract
A semiconductor light emitting element comprising a semiconductor substrate having a lower electrode on its back, a pn junction, a first light reflecting layer disposed between the substrate and the pn junction, an upper electrode, and a second light reflecting layer disposed between the pn junction and the upper electrode, the second light reflecting layer being capable of substantially reflecting the light heading toward the upper electrode, which preferably has, between the pn junction and the second light reflecting layer, a semiconductor layer having a wider bandgap than that of a light emitting layer formed by said pn junction. The semiconductor light emitting element of the invention is advantageous in that the light absorption in the upper electrode can be inhibited to permit efficient output of the light heading toward the upper electrode from the element, and luminance can be greatly increased by the effective output of the light from the element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.