Method of fabricating storage capacitors using high dielectric constant materials

US5416042A · kind A · utility

Assignee

• International Business Machines Corporation · US

Inventors

• David B. Beach · Yorktown Heights, US
• Alfred Grill · White Plains, US
• Christopher J. Smart · Wappingers Falls, US

Key dates

• Filing date: Jun 9, 1994
• Grant date: May 16, 1995
• Expiry date: Jun 9, 2014

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S148/014

Abstract

A storage capacitor having high dielectric constant materials and a method for forming same are described. The method solves the problems associated with fabrication of planar capacitors for DRAM chips constructed from inorganic oxides with perovskite structure. These materials are not readily etched by conventional ion etching techniques. These materials also react with silicon and silicon dioxide and the disclosed process avoids these interactions.