Electrostatic discharge protection
US5416351A · kind A · utility
66Cited by
6References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 20, 1992 |
| Grant date | May 16, 1995 |
| Priority date | — |
| Expiry date | Nov 20, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03M1/365
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
An ESD protection diode for a CMOS or BiCMOS integrated circuit formed by imbedding a Zener diode in the drain of a MOS device used as a protection diode. The Zener diode may be formed with the preexisting process steps of a BiCMOS process, and it provides a low voltage trigger for avalanche breakdown in the MOS ESD protection diode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.