Netoresistance effect element
US5416353A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 10, 1993 |
| Grant date | May 16, 1995 |
| Priority date | — |
| Expiry date | Sep 10, 2013 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B5/3993
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A magnetoresistance effect element is prepared by successively forming one upon the other a first magnetic layer, a P- or N-type semiconductor layer, a second magnetic layer, and a magnetization fixing layer in this order on an insulating substrate. A Schottky junction is formed between the first magnetic layer and the semiconductor layer and between the semiconductor layer and the second magnetic layer. The relative angle between the magnetization direction within the first magnetic layer and the magnetization direction within the second magnetic layer is changed depending on the intensity of the magnetic field, leading to a change in the tunnel conductance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.