Patent · US Expired

MOS memory unit for serial information processing

US5416737A · kind A · utility

6Cited by

2References

6Claims

0Family size

Assignee

Temic Telefunken Microelectronik · DE

Inventors

Ernst Lingstaedt · Munich, DE
Uwe Weder · Freiburg im Breisgau, DE

Key dates

Filing date	Feb 10, 1994
Grant date	May 16, 1995
Priority date	—
Expiry date	Feb 10, 2014

Classification

Technology area (CPC H)Electricity
CPC primaryH03K3/356156
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

The invention relates to a MOS memory unit for serial information processing, in particular a shift register stage with an EEPROM cell having a floating gate transistor. According to the prior art, the gate electrodes of all floating gate transistors of a memory unit have the same potential. The result is that two programming cycles must be performed for complete programming, entailing a high current consumption. In accordance with the invention, the drain electrode of the floating gate transistor is connected via an inverter stage to its gate electrode. This halves the total programming time and hence also the total programming current in comparison with the prior art.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.