Neodymium-doped gehlenite crystal and laser using said crystal
US5416789A · kind A · utility
3Cited by
1References
13Claims
0Family size
Inventors
Key dates
| Filing date | Mar 22, 1993 |
| Grant date | May 16, 1995 |
| Priority date | — |
| Expiry date | Mar 22, 2013 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/34
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Neodymium-doped gehlenite crystal and laser using said crystal. The crystal according to the invention has the formula Ca.sub.2-x Nd.sub.x Al.sub.2+x Si.sub.1-x O.sub.7 with 0<.times..ltoreq.1. This crystal can be used as a laser emitter (4) optically pumped by a laser diode (6), whose temperature is not controlled by a Peltier element component.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.