Semiconductor laser with a self-sustained pulsation
US5416790A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 4, 1993 |
| Grant date | May 16, 1995 |
| Priority date | — |
| Expiry date | Nov 4, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3211
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor laser with a self-sustained pulsation is disclosed in which a first cladding layer of first conductive type, an active layer and a second cladding layer of second conductive type having a striped ridge are formed in that order on a semiconductor substrate of first conductive type. The first and second cladding layers have a refractive index smaller than and a band gap larger than the active layer. A saturable optical absorbing layer having a band gap of energy substantially equal to the energy corresponding to lasing wavelength is formed in both the first and second cladding layers. Further, a barrier layer having a refractive index smaller than and a band gap larger than the first and second cladding layers is formed between the first cladding layer and the active layer and/or between the active layer and the second cladding layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.