Sputtering target and method of manufacturing the same
US5418071A · kind A · utility
35Cited by
3References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 4, 1993 |
| Grant date | May 23, 1995 |
| Priority date | — |
| Expiry date | Feb 4, 2013 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/12056
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
In the present invention, metal silicide grains form an interlinked structure of a metal silicide phase, and Si grains which form a Si phase are discontinuously dispersed between the metal silicide phase to provide a sputtering target having a high density two-phased structure and having an aluminum content of 1 ppm or less. Because of the high density and high strength of the target, the generation of particles from the target during sputtering is reduced, and due to the reduced carbon content of the target, the mixing of carbon into the thin film during sputtering can be prevented.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.