Method of making schottky diode with guard ring
US5418185A · kind A · utility
21Cited by
3References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 21, 1993 |
| Grant date | May 23, 1995 |
| Priority date | — |
| Expiry date | Jan 21, 2013 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/146
Abstract
A Schottky diode circuit 20 is formed on a semiconductor layer 24. A conductive contact 36 on the surface of the semiconductor layer 24 forms a Schottky barrier 40 at the junction of the conductive contact 36 and the semiconductor layer 24. A guard ring 26 in the semiconductor layer 24 is adjacent to the Schottky barrier 40 and is separated from the conductive contact 36 by a portion of the semiconductor layer 24. No direct electrical path exists between the guard ring 26 and the conductive contact 36.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.