Suppression of graphite formation during laser etching of diamond
US5419798A · kind A · utility
8Cited by
4References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 25, 1994 |
| Grant date | May 30, 1995 |
| Priority date | — |
| Expiry date | May 25, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3065
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Graphite formation on a diamond surface during laser etching is inhibited or the graphite is removed by contact with a gaseous material such as elemental hydrogen, elemental oxygen, an inert gas or a source of hydroxyl radicals. Preferably, the article being etched is cooled and maintained in an inert atmosphere during etching.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.