Low emissivity film
US5419969A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 27, 1991 |
| Grant date | May 30, 1995 |
| Priority date | — |
| Expiry date | Nov 27, 2011 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24942
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A low emissivity film formed on a substrate, which comprises a coating of oxide films and films whose major component is Ag alternately formed on the substrate in a total of (2n+1) layers where n is an integer being equal to or more than 1, with the innermost layer being an oxide film, wherein an integral width .beta.i(.degree.) of (111) diffraction line of a cubic Ag in an X-ray diffraction diagram of the low emissivity film exists in a first range of 180.lambda./(d.pi.cos.theta.).ltoreq..beta.i.ltoreq.180.pi./(d.pi.cos.thet a.)+0.15, where d(.ANG.) designates a thickness of a film whose major component is Ag, .pi.(.ANG.), a wave length of an X-ray for measurement and .theta., Bragg angle.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.