Manufacturing method of interconnection structure of semiconductor device
US5420070A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 7, 1994 |
| Grant date | May 30, 1995 |
| Priority date | — |
| Expiry date | Feb 7, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a multi-layer aluminum interconnection structure, improved reliability as well as a stable via-hole resistance are achieved by promoting mixing at an interface between aluminum interconnection layers and improving coverage of an upper aluminum interconnection layer at a connection hole. A first aluminum interconnection layer is electrically connected to a second aluminum interconnection layer through a connection hole. The second aluminum interconnection layer is provided with a titanium film, a titanium nitride film and aluminum alloy film. A connection hole is filled with a tungsten film. A tungsten film is formed on a surface of the first aluminum interconnection layer. The titanium film is in contact with the tungsten film through the connection hole.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.