High power solid state R.F. amplifier
US5420537A · kind A · utility
45Cited by
3References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 30, 1993 |
| Grant date | May 30, 1995 |
| Priority date | — |
| Expiry date | Sep 30, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03F2200/541
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
Although known because of high packaging inductances and thought to be wholly unsuitable for RF amplifiers, high voltage power switching MOSFETs of the type having coplanar leads having inductances on the order of between 8 nH and 15 nH are used in an RF amplifier. The individual devices operate on a high impedance load line to render the high inductance insignificant. The circuit configuration presents a high impedance to the output, eliminating the need for expensive combiners and low inductance packaging.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.