Linear bipolar junction transistor amplifier
US5420538A · kind A · utility
23Cited by
3References
10Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jun 10, 1994 |
| Grant date | May 30, 1995 |
| Priority date | — |
| Expiry date | Jun 10, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03F2200/456
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A linear bipolar junction transistor amplifier. The linear gain is achieved by an offset voltage created by ratioed transistors wherein the ratio is an integer. The ratios are achieved either by connecting equal transistors in parallel or by employing multiple emitters on a single transistor. This results in a linear amplifier which is substantially independent of manufacturing process tolerance variations as well as power supply and temperature variations.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.