Gadolinium vanadate laser
US5420876A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 2, 1994 |
| Grant date | May 30, 1995 |
| Priority date | — |
| Expiry date | Jun 2, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S3/1671
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An intracavity frequency-doubled solid-state laser uses a Nd:GdVO.sub.4 laser gain chip to generate a beam of visible laser light which may have wavelengths substantially in the green portion of the optical spectrum. A back end of the laser cavity is defined by an entrance mirror while a front end of the laser cavity is defined by a mirrored surface. A laser diode generates pump light which is transmitted through the entrance mirror into the laser gain chip. The laser gain chip, which may be immediately adjacent the entrance mirror, emits fundamental laser light having a wavelength of approximately 1063 nm in response to the pump light. A frequency doubler chip positioned immediately adjacent the laser gain chip doubles the frequency of the fundamental laser light to produce harmonic laser light having a wavelength of substantially 532 nm. In a second embodiment, the frequency doubler chip is immediately adjacent to the entrance mirror and the laser gain chip is immediately adjacent to the frequency doubler chip. The mirrored surface reflects a portion of the harmonic laser light back into the laser cavity and transmits a portion of the harmonic laser light from the laser.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.