Piezoelectric resonator
US5422533A · kind A · utility
10Cited by
12References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 9, 1994 |
| Grant date | Jun 6, 1995 |
| Priority date | — |
| Expiry date | Mar 9, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H9/175
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A piezoelectric resonator for use with microwave monolithic integrated ciit (MMIC) devices which are fabricated on (100) GaAs (gallium arsenide) material is provided. This resonator has a central resonator flat portion composed of (100) GaAs material and has a distributed reflector on each side of the flat portion with each reflector having an alternating series of layers, including a first layer having doped regions and an uppermost layer composed of the (100) GaAs material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.