Driving circuit for a field effect transistor in a final semibridge stage
US5422587A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 11, 1994 |
| Grant date | Jun 6, 1995 |
| Priority date | — |
| Expiry date | Jan 11, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K17/687
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A drive circuit for a field-effect transistor is disclosed, the field-effect transistor having a drain terminal connected to the positive pole of a voltage supply and a source terminal connected to a load. The drive circuit comprises a first transistor connected between the gate terminal of the field-effect transistor and the negative pole of the voltage supply for turning off the field-effect transistor. The first transistor is driven by an operational amplifier which has inverting and non-inverting teminals connected to the gate and source terminals of the field-effect transistor, respectively. Switches alternatively intercouple the field-effect transistor to either another voltage supply or the first transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.