Non-volatile memory programming at arbitrary timing based on current requirements
US5422856A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 1, 1994 |
| Grant date | Jun 6, 1995 |
| Priority date | — |
| Expiry date | Mar 1, 2014 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/102
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
To effect erase and program operations, i.e., rewrite of the non-volatile memory device efficiently with small electric power consumption and at high speed, a plurality of memory blocks that have a plurality of sectors and that each include a plurality of non-volatile memory cells are connected to buffer memories having at least the same memory capacity as a sector, and a read/write circuit generates internal addresses and timing for selecting sectors according to the external address and timing signals to control the read-out and rewrite of data between the sectors corresponding to the internal addresses and the buffer memories corresponding to the sectors, wherein the read/write circuit selects the sectors at timings shifted from one another and erases or programs the data in the selected sector in order to rewrite the data.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.