Method of and means for controlling the electromagnetic output power of electro-optic semiconductor devices
US5422904A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 20, 1993 |
| Grant date | Jun 6, 1995 |
| Priority date | — |
| Expiry date | Aug 20, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3428
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present invention relates to a separate confinement heterostructure laser, and in particular to a stripe geometry, ridge waveguide geometry, having an active layer positioned between a pair of n-type and p-type emitter layers which inject charge carriers under the ridge guide into the active layer. A pair of ohmic contacts are used to inject one type of charge carrier into at least one emitter layer outside the ridge area. When a signal is applied to the pumping contacts (p- and n-type) in forward bias and an intermittent electric field is applied to the ohmic side contacts, the flow of current injected by the side contacts controls the densities of carriers injected by the pumping contacts, thereby controlling spatially and temporally the optical gain and optical confinement factor. In another embodiment, a stripe geometry, ridge waveguide heterostructure laser is disclosed having pumping contacts under the ridge guide to an active layer between two emitter layers with a portion coextending transversely through the ridge and another portion extending laterally outside the ridge. A pair of electro-optic dielectric layers are positioned on the portion of one emitter layer extend…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.