Method for manufacturing a hybrid circuit charge-coupled device image sensor
US5423119A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jul 8, 1994 |
| Grant date | Jun 13, 1995 |
| Priority date | — |
| Expiry date | Jul 8, 2014 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49146
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a hybrid circuit-type charge-coupled device image sensor includes the steps of: forming a lead wire unit on a first layout surface of a ceramic base; attaching a charge-coupled device image sensor die on the first layout surface; wire bonding the charge-coupled device image sensor die to the lead wire unit; mounting a window frame on the first layout surface to enclose the charge-coupled device image sensor die by applying a layer of sealing material on a lower peripheral end of the window frame; mounting a glass lid on the window frame by applying another layer of sealing material on an upper peripheral end of the window frame; and heating an assembly of the glass lid, the window frame and the ceramic base in an oven so as to cure and harden the layers of sealing material and bond together the glass lid, the window frame and the ceramic base.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.