HF-CVD method for forming diamond
US5424096A · kind A · utility
11Cited by
2References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 13, 1994 |
| Grant date | Jun 13, 1995 |
| Priority date | — |
| Expiry date | Jun 13, 2014 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/30
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Diamond is produced by chemical vapor deposition on a substrate by hot filament activation of a hydrogen-hydrocarbon gas mixture. An edge of the substrate faces the filament at a distance; therefrom up to about 1 mm. and preferably about 0.3-0.7 mm., and the substrate is moved relative to the filament to maintain this spacing as diamond forms thereon. Diamond formation proceeds at an improved rate, and in single crystal configuration under certain conditions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.