Method of making a force detecting sensor
US5424241A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 14, 1994 |
| Grant date | Jun 13, 1995 |
| Priority date | — |
| Expiry date | Jun 14, 2014 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01L1/005
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A force detecting microsensor comprises a single crystal Si substrate, a single crystal cone formed on the substrate and a resilient electrode mounted above the tip of the Si cone. The space between the tip of the Si cone and the resilient electrode is maintained in a vacuum environment and the distance between the tip and the resilient anode is in the order of a few atomic diameters. The tunneling effect of electrons occurs between the tip of the Si cone and the resilient electrode when a potential is applied to the resilient electrode and the Si cone tip. The resilient electrode deflects as a result of the force acting on the microsensor. The deflection of the resilient electrode alters the electrical characteristics between the resilient electrode and the Si cone tip. The changes in the electrical characteristics can be measured to determine the level of force acting on the microsensor. The process for making the microsensor according to the invention comprises the steps of forming an insulating layer and support layer on the substrate, forming a recess in the insulating layer and aperture in the support layer, depositing a single crystal Si cone on the substrate and fully enclo…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.