Method for making an optoelectronic amplifier device, and applications to various optoelectronic
US5424242A · kind A · utility
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9Claims
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Key dates
| Filing date | Apr 29, 1993 |
| Grant date | Jun 13, 1995 |
| Priority date | — |
| Expiry date | Apr 29, 2013 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/095
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for making an optical amplifier according to which a stack of the following layers is made by epitaxy: a first optical guiding layer; a first chemical attack barrier layer; a second optical guiding layer; a second chemical attack barrier layer; an active layer; a confinement layer; and a contact layer. Then at least one amplifier element followed by an optical guide located beneath this amplifier element are etched in these layers. The method can be applied to the making of optoelectronic devices such as modulators, change-over switches, distributors, etc.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.