Patent · US Expired

Circuit and method of providing thermal compensation for a transistor to minimize offset voltage due to self-heating of associated devices

US5424510A · kind A · utility

4Cited by
5References
31Claims
0Family size

Assignee

Inventors

Key dates

Filing dateAug 27, 1993
Grant dateJun 13, 1995
Priority date
Expiry dateAug 27, 2013

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D84/641

Abstract

A circuit for varying the temperature of a first bipolar transistor in order to thermally compensate for self-heating effects of an associated device in a common signal path with the first transistor, the first transistor being configured within an isolated collector region. The circuit includes a second bipolar transistor provided within the isolated collector region and thermally coupled to the first transistor, the second transistor operable for providing heat to the first transistor to alter the temperature to a predetermined level, thus changing the operational voltage characteristics of the first transistor so as to minimize shifts in offset voltage.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.