Circuit and method of providing thermal compensation for a transistor to minimize offset voltage due to self-heating of associated devices
US5424510A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 27, 1993 |
| Grant date | Jun 13, 1995 |
| Priority date | — |
| Expiry date | Aug 27, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/641
Abstract
A circuit for varying the temperature of a first bipolar transistor in order to thermally compensate for self-heating effects of an associated device in a common signal path with the first transistor, the first transistor being configured within an isolated collector region. The circuit includes a second bipolar transistor provided within the isolated collector region and thermally coupled to the first transistor, the second transistor operable for providing heat to the first transistor to alter the temperature to a predetermined level, thus changing the operational voltage characteristics of the first transistor so as to minimize shifts in offset voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.