Magnetoresistance effect type thin film head
US5424890A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 24, 1994 |
| Grant date | Jun 13, 1995 |
| Priority date | — |
| Expiry date | Aug 24, 2014 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B5/40
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A magnetoresistance effect type thin film head (A) constructed in a manner that a magnetoresistance effect element, that is, an MR element (1) is disposed perpendicularly to a head surface a, and among two electrodes (2a) and (2b) led out from both ends of the MR element (1), the one electrode (2a) is exposed to the head surface a but the other electrode (2b) is not exposed to the head surface a, wherein the one electrode (2a) exposed to the head surface a is connected to a ground voltage Vss, thereby decreasing the change in voltage difference between the electrode (2a) of the MR element (1) and a disc surface b to prevent the electrical breakdown of the thin film head (A).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.