Optoelectric memories with photoconductive thin films
US5424974A · kind A · utility
21Cited by
4References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 5, 1994 |
| Grant date | Jun 13, 1995 |
| Priority date | — |
| Expiry date | Jul 5, 2014 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB82Y10/00
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
Methods and apparatii are described for information storage in photoconductive film of single layer composition by irradiation of memory elements simultaneously with application of an electric field. Information is stored as trapped charge accumulations in the film when the irradiation is removed, but trapped charge can be released by subsequent irradiation. Repeated information storage, followed by erasure, returns the films to their original state without degradation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.