Process for semiconductor device etch damage reduction using hydrogen-containing plasma
US5425843A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 15, 1993 |
| Grant date | Jun 20, 1995 |
| Priority date | — |
| Expiry date | Oct 15, 2013 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/913
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A multi-layer structure, typically semiconductor device, is etched according to a process of the present invention, and meets the above-described existing needs by focusing on the post-etch treatment of the damaged, etched semiconductor device formed thereby. This post-etch treatment is accomplished by exposing the damaged silicon to a forming-gas downstream plasma which results in substantially increased oxide regrowth and significantly higher level of gate oxide quality. In conducting the process of the subject invention from about 1% up to about 15% by volume of H.sub.2, and from about 85 up to about 99% by volume of N.sub.2 are preferably employed as the post etching forming-gas plasma.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.