Method of inspecting image sensors
US5426060A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 2, 1992 |
| Grant date | Jun 20, 1995 |
| Priority date | — |
| Expiry date | Sep 2, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/12
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A method of inspecting and a method of manufacturing image sensors formed on a surface of a semiconductor wafer. A semiconductor wafer is provided having image sensors formed on its surface. Grooves are cut at boundaries between image sensors to be inspected, so that each groove has a depth that is smaller than the thickness of the semiconductor wafer. The grooves are cut in the boundaries between the image sensors so that photoN sensing carriers generated in the boundary regions, that are not generated by the image sensor being inspected, do not affect the inspection of the image sensor. The characteristics of the image sensors are inspected before cutting through the semiconductor wafer to form individual image sensors. Thus, in accordance with the present invention, the electrical characteristics of the image sensors can be accurately ascertained either before or after separation from the semiconductor wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.