Method for making silicon-germanium devices using germanium implantation
US5426069A · kind A · utility
77Cited by
11References
11Claims
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Key dates
| Filing date | Apr 9, 1992 |
| Grant date | Jun 20, 1995 |
| Priority date | — |
| Expiry date | Apr 9, 2012 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
Abstract
Silicon-germanium devices including MOSFETs, photogates and photodiodes, are produced by implanting the Si or polycrystalline silicon substrate with Ge.sup.+, to realize active SiGe regions within Si which are substantially free from defects, at an appropriate point in the fabrication by conventional techniques.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.