Polyimide copolymer film for lift-off metallization
US5426071A · kind A · utility
7Cited by
10References
14Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 4, 1994 |
| Grant date | Jun 20, 1995 |
| Priority date | — |
| Expiry date | Mar 4, 2014 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC08J2379/08
- WIPO fieldMacromolecular chemistry, polymers
- WIPO sectorChemistry
Abstract
A polyimide copolymer derived from 2,2-bis(3,4-dicarboxyphenyl)hexafluoropropane dianhydride, oxydiphthalic dianhydride, m-phenylene diamine and 4,4'-oxydianiline, for use as a high-temperature resistant lift-off layer in the fabrication of integrated circuit substrates.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.