Boosting circuit device capable of pre-pumping and semiconductor memory device
US5426333A · kind A · utility
Assignees
Inventor
Key dates
| Filing date | Apr 22, 1994 |
| Grant date | Jun 20, 1995 |
| Priority date | — |
| Expiry date | Apr 22, 2014 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/4085
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A dynamic random access memory in which data are successively read out responsive to a read command signal is provided with a boosting circuit device. The boosting circuit device has a pumping circuit operable with a first electric power source at a first voltage and responsive to a control clock signal for producing a second electric power at a second voltage boosted higher than the first voltage of the first electric power. A one-shot pulse generator is provided for generating a single pulse from which a pre-pumping pulse is produced to be included in the control clock signal. Thus, the control clock signal contains a pre-pumping pulse and a plurality of clock pulses following the pre-pumping pulse, so that the second voltage of the second electric power has been boosted higher than the first voltage of the first electric power by the pre-pumping pulse in advance of a successive readout of data.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.