Chemical purification for semiconductor processing by partial condensation
US5426944A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 31, 1993 |
| Grant date | Jun 27, 1995 |
| Priority date | — |
| Expiry date | Aug 31, 2013 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S62/91
- WIPO fieldChemical engineering
- WIPO sectorChemistry
Abstract
A purification method and apparatus for creating ultra-purity chemicals for semiconductor processing. The purification method includes a step of expanding an ESG chemical through an orifice (17) inside a condenser (21) to a partial condensed state for removing impurities from ESG chemical. During the expansion step, the higher boiling point impurities remain in the liquid phase and the impurities in the vapor phase are removed at least in part by a scavenging technique. After purification, the ultra-purified gas is transferred to a semiconductor manufacturing operation (24). The manufacturing operation includes both dry and wet processes. The method may also be integrated into a large volume on-site purification system (30), on-line point of use purifier (50), or small volume trans-filling purification system (70).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.