Solid state formation of sapphire using a localized energy source
US5427051A · kind A · utility
24Cited by
18References
24Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 21, 1993 |
| Grant date | Jun 27, 1995 |
| Priority date | — |
| Expiry date | May 21, 2013 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S117/904
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Polycrystalline alumina bodies have been converted to sapphire by a solid state conversion process in which a localized energy source is used to heat only a portion of the body to a temperature above 1800.degree. C. Using a laser as the energy source resulted in conversion to sapphire in less than an hour. The polycrystalline alumina bodies had a magnesia content below 50 wppm, an average grain size below 100 microns, and a density greater than 3.97 g/cc.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.