Method for manufacturing porous semiconductor light emitting device
US5427977A · kind A · utility
21Cited by
3References
24Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 6, 1994 |
| Grant date | Jun 27, 1995 |
| Priority date | — |
| Expiry date | Jan 6, 2014 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/962
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An Si or SiC semiconductor layer is subjected to anodic oxidation in an HF solution to form a porous semiconductor layer. Without drying, the porous semiconductor layer is then immersed in pure water. Ultrasonic waves applied to the pure water shorten the reaction time and help bubbles separate from the surface of the porous region. The porous semiconductor layer is used for forming a pn junction, and carriers are injected into the pn junction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.