Patent · US Expired

Amorphous, hydrogenated carbon as an insulator in device fabrication

US5427985A · kind A · utility

2Cited by

2References

8Claims

0Family size

Assignee

Siemens Aktiengesellschaft · DE

Inventors

Albert Hammerschmidt · Erlangen, DE
Thomas Mandel · Nuremberg, DE

Key dates

Filing date	Mar 9, 1994
Grant date	Jun 27, 1995
Priority date	—
Expiry date	Mar 9, 2014

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10S438/91
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Amorphous, hydrogenated carbon (a-C:H) having a low interfacial state density is obtained when a-C:H layers that had been produced on a semiconductor substrate through plasma deposition are subjected to a hydrogen treatment at an increased pressure and increased temperature.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.