Semiconductor light emitting element
US5428227A · kind A · utility
Assignees
Inventor
Key dates
| Filing date | Mar 16, 1994 |
| Grant date | Jun 27, 1995 |
| Priority date | — |
| Expiry date | Mar 16, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/0267
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor light emitting element has a semiconductor laminating structure formed on a semiconductor substrate and having a junction portion formed in parallel with a semiconductor substrate face; a light generating portion formed in the vicinity of the junction portion such that an electric current can be injected into the light generating portion; a light emitting end face approximately perpendicular to the junction portion and approximately having an arc or hyperbolic shape in a direction parallel to the semiconductor substrate face; and an electrode for electric current injection formed in an upper portion of the semiconductor laminating structure and arranged in a position separated from at least a center of curvature of the arc light emitting end face. The semiconductor light emitting element has a shape of the light emitting portion and a layer structure capable of controlling a radiant angle of light. Since the light emitting end face is formed in an arc shape, a full angle at half maximum of emitted light in a horizontal direction with respect to the substrate face can be reduced in comparison with a case in which the light emitting end face has a linear shape. Optica…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.