Method of making linear capacitors for high temperature applications
US5429981A · kind A · utility
13Cited by
5References
11Claims
0Family size
Assignee
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Key dates
| Filing date | Jun 30, 1994 |
| Grant date | Jul 4, 1995 |
| Priority date | — |
| Expiry date | Jun 30, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/01
Abstract
A method for making a voltage linear capacitor for use with a metal oxide semiconductor field transistor wherein a capacitor portion of an SOI substrate is heavily doped with phosphorus. The thin oxide layer used for the transistor gate oxide also serves as the capacitor dielectric and the thickness of the dielectric relative to the gate oxide is controlled.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.