Field effect transistor with switchable body to source connection
US5430403A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 20, 1993 |
| Grant date | Jul 4, 1995 |
| Priority date | — |
| Expiry date | Sep 20, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/516
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
To avoid forward biasing the diodes within an N-channel transistor, the body and source of the N-channel transistor are switchably connected via a high-voltage FET. The gates of the N-channel transistor and high-voltage transistor are connected together so that both transistors are on or off simultaneously. When both transistors are on, the high-voltage transistor shorts the body and source of the N-channel transistor. When both transistors are off, the body and source of the N-channel transistor are disconnected and a third transistor couples the body to a reference potential. The N-channel transistor and high voltage transistor share a common body in a semiconductor substrate. The source of the N-channel transistor provides an output terminal for the circuit. A number of these devices, each connected to a different supply voltage, can be connected to the same output terminal and selectively energized to form a voltage multiplexer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.