Patent · US Expired

Integratable capacitative pressure sensor

US5431057A · kind A · utility

41Cited by
5References
12Claims
0Family size

Assignee

Inventors

Key dates

Filing dateFeb 18, 1994
Grant dateJul 11, 1995
Priority date
Expiry dateFeb 18, 2014

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10T29/435
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

A process for manufacturing an integratable capacitative pressure sensor includes the following steps, starting from a semiconductor substrate (1): application of a guard film (2), precipitation of a polycrystalline semiconductor film (4), doping the polycrystalline semiconductor film (4) and removal of the guard film (2) by etching; then insulating the semiconductor zone (7) from the semiconductor substrate (1), and applying an insulator film (8) on the insulated semiconductor zone (7). The pressure sensor product, which is compatible with CMOS circuits and has increased sensor accuracy, includes a semiconductor zone (7) insulated from the semiconductor substrate (1) and an insulator film (8) applied on the insulated semiconductor zone (7), the polycrystalline semiconductor film (4) being located on the insulator film (8) above the insulated semiconductor zone (7).

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.