Process for producing semiconductor spheres
US5431127A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 14, 1994 |
| Grant date | Jul 11, 1995 |
| Priority date | — |
| Expiry date | Oct 14, 2014 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
A method of manufacturing semiconductor particles (30) of uniform mass. A template (12) is used to meter out uniform mass piles (28) of semiconductor feedstock upon a refractory layer (14). These piles (28) of semiconductor feedstock are then melted briefly to obtain semiconductor particles (30) of uniform mass. Silica is the preferred refractory layer, and is separated from the particles after the melt procedure. Subsequent melt procedures can be implemented to ultimately obtain perfect spheres of the semiconductor material. The present invention is well suited for forming semiconductor spheres to be implemented in photovoltaic solar cells. Semiconductor grade or metallurgical grade feedstock can be implemented to obtain particles of high purity. High yields of uniformly massed spheres can be obtained to produce high efficiency photovoltaic cells at a moderate cost.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.