Process for forming metal films by plasma sputtering
US5431794A · kind A · utility
12Cited by
5References
3Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Nov 5, 1993 |
| Grant date | Jul 11, 1995 |
| Priority date | — |
| Expiry date | Nov 5, 2013 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/31692
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A metal film high in reflectivity and excellent in adhesion to a synthetic resin substrate even in the case where the metal film is sufficiently thin, is formed on a surface of the substrate by sputtering a metal target by ions through an inert gas plasma in a vacuum vessel, wherein the substrate is covered with an electrostatic shield during the sputtering.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.