Detector for the detection of chemical species or photons using a field effect transistor
US5431883A · kind A · utility
Inventor
Key dates
| Filing date | Jan 27, 1994 |
| Grant date | Jul 11, 1995 |
| Priority date | — |
| Expiry date | Jan 27, 2014 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N27/414
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The invention relates to a detector or sensor for the detection of chemical species or photons. This detector uses a field effect transistor having a semiconducting material substrate (1) in which are defined a source (3) and a drain (5), a gate (9) separated from the substrate by an insulating layer, an external energy source for polarizing the drain, source and gate of the transistor, a film (11), which is conductive or which can be rendered conductive and which is sensitive to the chemical species or photons to be detected, and an ammeter for measuring an electric current variation of the transistor. The arrangement of the film (11) between the connections of the gate (9) and the drain (5) makes it possible to modify the polarization voltage of the transistor gate under the effect of the species to be detected, which is represented by a variation of the current between the drain and the source, when the transistor is correctly polarized.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.