Process for ion-assisted laser deposition of biaxially textured layer on substrate
US5432151A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 12, 1993 |
| Grant date | Jul 11, 1995 |
| Priority date | — |
| Expiry date | Jul 12, 2013 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S505/732
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A process for depositing a biaxially aligned intermediate layer over a non-single crystal substrate is disclosed which permits the subsequent deposition thereon of a biaxially oriented superconducting film. The process comprises depositing on a substrate by laser ablation a material capable of being biaxially oriented and also capable of inhibiting the migration of substrate materials through the intermediate layer into such a superconducting film, while simultaneously bombarding the substrate with an ion beam. In a preferred embodiment, the deposition is carried out in the same chamber used to subsequently deposit a superconducting film over the intermediate layer. In a further aspect of the invention, the deposition of the superconducting layer over the biaxially oriented intermediate layer is also carried out by laser ablation with optional additional bombardment of the coated substrate with an ion beam during the deposition of the superconducting film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.