Semiconductor device including an anode layer having low density regions by selective diffusion
US5432360A · kind A · utility
11Cited by
1References
2Claims
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Key dates
| Filing date | Feb 24, 1994 |
| Grant date | Jul 11, 1995 |
| Priority date | — |
| Expiry date | Feb 24, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/617
Abstract
A semiconductor diode characterized by an anode electrode structure connected to a double diffusion of P-type impurities in a major surface of an N.sup.- semiconductor. The first diffusion forming a first plurality of P.sup.- well regions and the second diffusion selectively forming a second plurality of P.sup.+ well regions within the first well region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.