Resonant tunnel effect quantum well transistor
US5432362A · kind A · utility
26Cited by
8References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 10, 1994 |
| Grant date | Jul 11, 1995 |
| Priority date | — |
| Expiry date | Jan 10, 2014 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB82Y30/00
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
The invention is a resonant tunnel effect quantum well transistor. To improve the gain by avoiding the storage of charges in the well, which consists of layer (14) with a narrow forbidden band and two barriers (13, 15) with a wide forbidden band, the quantum well is laterally bounded--in the plane of the layers--by a depleted region (22) which forms a quantum box whose dimensions are smaller than the De Broglie wavelength. Application to fast electronics (200 GHz).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.