Monolithically integrated circuit

US5432371A · kind A · utility

Assignee

• Robert Bosch GmbH · DE

Inventors

• Volkmar Denner · Pfullingen, DE
• Wolfgang Troelenberg · Reutlingen, DE
• Peter Brauchle · Nehren, DE
• William-Neil Fox · Gomaringen, DE
• Neil Davies · Sedgefield, GB

Key dates

• Filing date: Dec 20, 1993
• Grant date: Jul 11, 1995
• Expiry date: Dec 20, 2013

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002

Abstract

A monolithically integrated circuit arrangement is arranged in a disc-shaped monocrystalline semiconductor body (100) of a first conductivity type, which semiconductor body consists of silicon and has a first and second main surface. The monolithically integrated circuit arrangement contains a vertical MOSFET power transistor (T1) which consists of a plurality of partial transistors connected in parallel and surrounded by a guard ring (4) of a second conductivity type opposite that of the semiconductor body (100). Proceeding from the first main surface (13), at least one zone (7, 8) of the conductivity type of the semiconductor body (100) but of increased impurity concentration is diffused into the guard ring (4) so as to form at least one active and/or passive peripheral circuit element (T2) which has a protective and/or regulating and/or control function.