Zinc oxide piezoelectric crystal film
US5432397A · kind A · utility
7Cited by
7References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 13, 1994 |
| Grant date | Jul 11, 1995 |
| Priority date | — |
| Expiry date | Jan 13, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N30/076
Abstract
Disclosed herein is a zinc oxide piezoelectric crystal film which is grown on an R-plane sapphire substrate to orient its c-axis in parallel with the substrate surface. In order to improve orientation of the zinc oxide piezoelectric crystal film used is a Zn target for forming the zinc oxide piezoelectric crystal film by sputtering contains not more than 5 percent by weight of nickel or not more than 4.5 percent by weight of iron with respect to Zn.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.