Magnetoresistance effect element
US5432661A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 3, 1994 |
| Grant date | Jul 11, 1995 |
| Priority date | — |
| Expiry date | Feb 3, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A magnetoresistance effect element is provided which comprises a substrate on which a first magnetic layer having a thickness of 0.2 to 5 nm which contains cobalt, a second magnetic layer having a thickness of not larger than 5 nm which contains iron or nickel or an alloy thereof, a third magnetic layer having a thickness of 0.2 to 5 nm which contains cobalt and a nonmagnetic layer having a thickness of 0.5 to 5 nm are laminated in this order at least twice, wherein the thickness of the second magnetic layer is not larger than half of the total thickness of the first and third magnetic layers. The element is useful as a magnetoresistance sensor or head.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.